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| FDZ299P February 2004 FDZ299P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features * -4.6 A, -20 V RDS(ON) = 55 m @ VGS = -4.5 V RDS(ON) = 80 m @ VGS = -2.5 V * Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * Outstanding thermal transfer characteristics: 4 times better than SSOT-6 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability. Applications * Battery management * Load switch * Battery protection S B G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -20 12 (Note 1a) Units V V A W C -4.6 -10 1.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 C/W Package Marking and Ordering Information Device Marking B Device FDZ299P Reel Size 7" Tape width 8mm Quantity 3000 units (c)2004 Fairchild Semiconductor Corporation FDZ299P Rev C6 (W) FDZ299P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25 unless otherwise noted C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage. (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min Typ -20 -15 Max Units V mV/C Off Characteristics ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 12 V, VGS = 0 V VDS = 0 V -0.6 -1 100 -1.0 3.3 44 68 58 -10 13 742 158 77 7.8 9 9 23 14 18 18 37 25 9 -1.5 A nA V mV/C m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -4.6 A, VGS= -2.5 V, ID = -3.6A, VGS = -4.5 V, ID = -4.6 A, TJ=125C VGS = -4.5 V, VDS = -5 V, VDS = -5 V ID = -4.6 A 55 80 71 ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr A S pF pF pF ns ns ns ns nC nC nC -1.4 A V nS nC Dynamic Characteristics VDS = -10 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, VGS = -4.5 V ID = -4.6 A, 6.6 1.6 1.8 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.4 A Voltage Diode Reverse Recovery Time IF = -4.6 A, Diode Reverse Recovery Charge diF/dt = 100 A/s (Note 2) -0.8 18 6.5 -1.2 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the a) 72 C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB b) 157 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ299P Rev C6 (W) FDZ299P Dimensional Outline and Pad Layout FDZ299P Rev C6 (W) FDZ299P Typical Characteristics 10 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) 8 -3.5V -3.0V -2.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 VGS = -2.0V 6 -2.0V -2.5V -3.0V -3.5V -4.5V 4 2 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = -4.6A VGS = -4.5V ID = -2.3A 0.15 0.12 TA = 125oC 0.09 TA = 25oC 0.06 125 150 0.03 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = -5V -ID, DRAIN CURRENT (A) 8 1 TA = 125oC 25oC 0.01 -55oC 0.001 6 0.1 4 TA = 125oC 2 25o C -55oC 0.5 1 1.5 2 2.5 0 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ299P Rev C6 (W) FDZ299P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 1000 ID = -4.6A VDS = -5V -15V -10V 800 CAPACITANCE (pF) CISS f = 1MHz VGS = 0 V 4 3 600 2 400 COSS 200 CRSS 1 0 0 2 4 Qg, GATE CHARGE (nC) 6 8 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 10ms 100ms 1s 20 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100us 15 SINGLE PULSE RJA = 157 C/W TA = 25 C 1 VGS = -4.5V SINGLE PULSE RJA = 157oC/W TA = 25oC 0.01 0.1 1 10s DC 10 0.1 5 10 100 0 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 157 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ299P Rev C6 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7 |
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